STGW30V60DF

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

询单篮立即咨询

品牌：STMicroelectronics

分类：二极管与晶体管

立即咨询您也可以将其添加到您的询单篮中进行批量查询。

询单篮

STGW30V60DF

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

品牌：STMicroelectronics

分类：二极管与晶体管

描述
特点
规格
咨询

描述

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特点

Maximum junction temperature: TJ= 175 °C

Tail-less switching off

VCE(sat)= 1.85 V (typ.) @ IC= 30 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode

规格

Product Category	IGBTs
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	600V
Collector-Emitter Saturation Voltage	2.35 V
Maximum Gate Emitter Voltage	- 20 V, 20 V
Continuous Collector Current at 25 ℃	60 A
Pd - Power Dissipation	258W
Operating Temperature	-55 ℃ to +175 ℃
Gate-Emitter Leakage Current	250 nA